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RF power amplifier

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</style><div role="note" class="hatnote navigation-not-searchable">Not to be confused with <a href="Audio_power_amplifier" title="Audio power amplifier">Audio power amplifier</a>.</div>

A radio-frequency power amplifier (RF power amplifier) is a type of <a href="Electronic_amplifier" class="mw-redirect" title="Electronic amplifier">electronic amplifier</a> that converts a low-power <a href="Radio-frequency" class="mw-redirect" title="Radio-frequency">radio-frequency</a> (RF) <a href="Signal_(electrical_engineering)" class="mw-redirect" title="Signal (electrical engineering)">signal</a> into a higher-power signal.<a href="#cite_note-APITech-RF-Amps-1">[1]</a> Typically, RF power amplifiers are used in the final stage of a <a href="Radio_transmitter" class="mw-redirect" title="Radio transmitter">radio transmitter</a>, their output driving the <a href="Antenna_(radio)" title="Antenna (radio)">antenna</a>. Design goals often include <a href="Gain_(electronics)" title="Gain (electronics)">gain</a>, power output, bandwidth, power efficiency, linearity (low <a href="Gain_compression" title="Gain compression">signal compression</a> at rated output), input and output impedance matching, and heat dissipation.

<div class="mw-heading mw-heading2"><h2 id="Amplifier_classes">Amplifier classes</h2></div>

<div role="note" class="hatnote navigation-not-searchable">Main article: <a href="Power_amplifier_classes" title="Power amplifier classes">Power amplifier classes</a></div>

The operation of RF amplifier circuits is classified based on the proportion of the cycle of the sinusoidal radio signal the amplifier (transistor or vacuum tube) where current is conducting. <a href="Power_amplifier_classes#Class_A" title="Power amplifier classes">Class-A</a>, <a href="Power_amplifier_classes#Class_AB" title="Power amplifier classes">class-AB</a> and <a href="Power_amplifier_classes#Class_B" title="Power amplifier classes">class-B</a> are considered the linear amplifier classes in which the active device is used as a controlled current source, while <a href="Power_amplifier_classes#Class_C" title="Power amplifier classes">class-C</a> is a nonlinear class in which the active device is used as a switch. The <a href="Bias_(electrical_engineering)" class="mw-redirect" title="Bias (electrical engineering)">bias</a> at the input of the active device determines the class of the amplifier.

A common trade-off in power amplifier design is the trade-off between efficiency and linearity. The previously named classes become more efficient, but less linear, in the order they are listed. Operating the active device as a switch results in higher efficiency, theoretically up to 100%, but lower linearity.<a href="#cite_note-Lee-2003-CMOS-2">[2]</a> Among the switch-mode classes are <a href="Class-D_amplifier" title="Class-D amplifier">class-D</a>, <a href="Power_amplifier_classes#Class_E" title="Power amplifier classes">class-E</a> and <a href="Power_amplifier_classes#Class_F" title="Power amplifier classes">class-F</a>.<a href="#cite_note-Cloutier-ClassE-amps-3">[3]</a> The class-D amplifier is not often used in RF applications because the finite switching speed of the active devices and possible charge storage in saturation could lead to a large I-V product,<a href="#cite_note-Lee-2003-CMOS-2">[2]</a> which deteriorates efficiency.

<div class="mw-heading mw-heading2"><h2 id="Solid_state_vs._vacuum_tube_amplifiers">Solid state vs. vacuum tube amplifiers</h2></div>

Modern RF power amplifiers use <a href="Power_semiconductor_device" title="Power semiconductor device">solid-state devices</a>, predominantly <a href="MOSFET" title="MOSFET">MOSFETs</a> (metal–oxide–semiconductor field-effect transistors).<a href="#cite_note-Balinga-2005-SiRF-MOSFETs-4">[4]</a><a href="#cite_note-MFJ-ALS-1300-tmos-5">[5]</a><a href="#cite_note-Perugupalli-Leighton-etal-2001-6">[6]</a> The earliest MOSFET-based RF amplifiers date back to the mid-1960s.<a href="#cite_note-Austin-Dean-etal-1966-11-7">[7]</a> <a href="Bipolar_junction_transistor" title="Bipolar junction transistor">Bipolar junction transistors</a> were also commonly used in the past, up until they were replaced by <a href="Power_MOSFET" title="Power MOSFET">power MOSFETs</a>, particularly <a href="LDMOS" title="LDMOS">LDMOS</a> transistors, as the standard technology for RF power amplifiers by the 1990s,<a href="#cite_note-Balinga-2005-SiRF-MOSFETs-4">[4]</a><a href="#cite_note-Perugupalli-Leighton-etal-2001-6">[6]</a> due to the superior RF performance of LDMOS transistors.<a href="#cite_note-Perugupalli-Leighton-etal-2001-6">[6]</a> Generally speaking, solid-state power amplifiers contain four main components: input, output, amplification stage and power supply.<a href="#cite_note-8">[8]</a>

MOSFET transistors and other modern <a href="Solid-state_(electronics)" class="mw-redirect" title="Solid-state (electronics)">solid-state</a> devices have replaced <a href="Vacuum_tube" title="Vacuum tube">vacuum tubes</a> in most electronic devices, but tubes are still used in some high-power transmitters (see <a href="Valve_RF_amplifier" title="Valve RF amplifier">Valve RF amplifier</a>). Although mechanically robust, transistors are electrically fragile – they are easily damaged by excess voltage or current. Tubes are mechanically fragile but electrically robust – they can handle remarkably high <a href="Overvoltage" title="Overvoltage">electrical overloads</a> without appreciable damage.

<div class="mw-heading mw-heading2"><h2 id="Applications">Applications</h2></div>

The basic applications of the RF power amplifier include driving to another high-power source, driving a transmitting <a href="Antenna_(radio)" title="Antenna (radio)">antenna</a> and exciting <a href="Microwave_cavity" title="Microwave cavity">microwave cavity</a> resonators. Among these applications, driving transmitter antennas is most well known. The <a href="Transceiver" title="Transceiver">transmitter–receivers</a> are used not only for voice and data communication but also for weather sensing (in the form of a <a href="Radar" title="Radar">radar</a>).<a href="#cite_note-9">[9]</a>

RF power amplifiers using <a href="LDMOS" title="LDMOS">LDMOS</a> (laterally diffused <a href="MOSFET" title="MOSFET">MOSFET</a>) are the most widely used <a href="Power_semiconductor_device" title="Power semiconductor device">power semiconductor devices</a> in <a href="Wireless_telecommunication" class="mw-redirect" title="Wireless telecommunication">wireless telecommunication</a> networks, particularly <a href="Mobile_network" class="mw-redirect" title="Mobile network">mobile networks</a>.<a href="#cite_note-Balinga-2005-SiRF-MOSFETs-4">[4]</a><a href="#cite_note-Asif-2018-SGMob-10">[10]</a><a href="#cite_note-Perugupalli-Leighton-etal-2001-6">[6]</a> LDMOS-based RF power amplifiers are widely used in digital mobile networks such as <a href="2G" title="2G">2G</a>, <a href="3G" title="3G">3G</a>,<a href="#cite_note-Balinga-2005-SiRF-MOSFETs-4">[4]</a><a href="#cite_note-Perugupalli-Leighton-etal-2001-6">[6]</a> and <a href="4G" title="4G">4G</a><a href="#cite_note-Asif-2018-SGMob-10">[10]</a> and the good cost/performance ratio make them the preferred option for <a href="Amateur_radio" title="Amateur radio">amateur radio</a>.<a href="#cite_note-11">[11]</a>

<div class="mw-heading mw-heading2"><h2 id="Wideband_amplifier_design">Wideband amplifier design</h2></div>

<a href="Electrical_impedance" title="Electrical impedance">Impedance</a> transformations over large <a href="Bandwidth_(signal_processing)" title="Bandwidth (signal processing)">bandwidth</a> are difficult to realize, so conventionally, most <a href="Wideband" title="Wideband">wideband</a> <a href="Amplifier" title="Amplifier">amplifiers</a> are designed to feed a 50 Ω output load. <a href="Transistor" title="Transistor">Transistor</a> output power is then limited to

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<annotation encoding="application/x-tex">{\displaystyle P_{\text{out}}\leq {\frac {(V_{\text{br}}-V_{\text{k}})^{2}}{8Z_{\text{o}}}},}</annotation>

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</math><img src="./e674f686e148fd57b88d4a9a0c3701f17747c0de.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -2.338ex; width:19.987ex; height:6.343ex;" alt="{\displaystyle P_{\text{out}}\leq {\frac {(V_{\text{br}}-V_{\text{k}})^{2}}{8Z_{\text{o}}}},}" loading="lazy"></dd></dl>

where

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<annotation encoding="application/x-tex">{\displaystyle V_{\text{br}}}</annotation>

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</math><img src="./05cd121fac0fd5477030a2be616a4cb23f91ad8e.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:3.146ex; height:2.509ex;" alt="{\displaystyle V_{\text{br}}}" loading="lazy"> is defined as the <a href="Breakdown_voltage" title="Breakdown voltage">breakdown voltage</a>,</dd>

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<annotation encoding="application/x-tex">{\displaystyle V_{\text{k}}}</annotation>

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</math><img src="./2fb7b1f0e0d699fb05fcef6b65b3acd515b32664.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:2.455ex; height:2.509ex;" alt="{\displaystyle V_{\text{k}}}" loading="lazy"> is defined as the knee voltage,</dd>

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The external load is, by convention, <math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle Z_{\text{L}}=50~\Omega .}">

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<annotation encoding="application/x-tex">{\displaystyle Z_{\text{L}}=50~\Omega .}</annotation>

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</math><img src="./52f3d1a678c8efa114efeb35a8d8d4980c2864be.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:11.176ex; height:2.509ex;" alt="{\displaystyle Z_{\text{L}}=50~\Omega .}" loading="lazy"> Therefore, there must be some sort of <a href="Impedance_matching" title="Impedance matching">impedance matching</a> that transforms from <math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle Z_{\text{o}}}">

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<annotation encoding="application/x-tex">{\displaystyle Z_{\text{o}}}</annotation>

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</math><img src="./0c8689db9c24ec1e33327d17835d9beeb1b41fa4.svg" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:2.642ex; height:2.509ex;" alt="{\displaystyle Z_{\text{o}}}" loading="lazy"> to <math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle Z_{\text{L}}=50~\Omega .}">

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<annotation encoding="application/x-tex">{\displaystyle Z_{\text{L}}=50~\Omega .}</annotation>

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The loadline method is often used in RF power amplifier design.<a href="#cite_note-Ozalas-2015-01-14-HowTo-12">[12]</a>

<ul><li><a href="FET_amplifier" title="FET amplifier">FET amplifier</a></li>

<li><a href="Power_electronics" title="Power electronics">Power electronics</a></li></ul>

<div class="mw-heading mw-heading2"><h2 id="References">References</h2></div>

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</style><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://info.apitech.com/rf-amplifiers-va">"RF Amplifiers"</a>. info.apitech.com. Retrieved 18 May 2021.</cite>

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<cite id="CITEREFLee2003" class="citation book cs1">Lee, Thomas (2003). The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge, UK: Cambridge University Press. pp. 494–503.</cite>

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<cite id="CITEREFCloutier" class="citation web cs1">Cloutier, Stephen R. (WA1QIX). <a rel="nofollow" class="external text" href="http://www.qrz.com/db/WA1QIX">"Class E, AM transmitter descriptions, circuits, etc"</a>. www.classeradio.com. WA1QIX. Retrieved 6 June 2015 – via qrz.com.</cite><code class="cs1-code">{{cite web}}</code>: CS1 maint: numeric names: authors list (link)

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<cite id="CITEREFBaliga2005" class="citation book cs1"><a href="B._Jayant_Baliga" title="B. Jayant Baliga">Baliga, B. Jayant</a> (2005). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=StJpDQAAQBAJ&pg=PA1">Silicon RF Power MOSFETs</a>. <a href="World_Scientific" title="World Scientific">World Scientific</a>. p. 1. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>9789812561213</bdi>.</cite>

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<cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://web.archive.org/web/20140423115819/http://www.ameritron.com/Downloads/index.php?productid=ALS-1300&filename=ALS-1300.pdf&company=ameritron">"Ameritron ALS-1300: 1200 Watt no-tune TMOS-FET amplifier"</a>. product information downloads. <a href="MFJ_Enterprises" title="MFJ Enterprises">MFJ Enterprises</a>. Archived from <a rel="nofollow" class="external text" href="http://www.ameritron.com/Downloads/index.php?productid=ALS-1300&filename=ALS-1300.pdf&company=ameritron">the original</a> on 23 April 2014. Retrieved 6 June 2015.</cite>

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<cite id="CITEREFPerugupalliLeightonJohanssonChen2001" class="citation book cs1">Perugupalli, Prasanth; Leighton, Larry; Johansson, Jan; Chen, Qiang (2001). <a rel="nofollow" class="external text" href="http://160592857366.free.fr/joe/ebooks/Electronics%20and%20Electrical%20Engineering%20Collection/DYE,%20N.%20(2000).%20Radio%20Frequency%20Transistors%20-%20Principles%20and%20Practical%20Applications%20(2nd%20ed.)/Radio_Frequency_Transistors_2E.pdf#page=275">"LDMOS RF power transistors and their applications"</a> (PDF). In Dye, Norman; Granberg, Helge (eds.). Radio Frequency Transistors: Principles and practical applications. <a href="Elsevier" title="Elsevier">Elsevier</a>. pp. 259–92. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>9780080497945</bdi>.</cite>

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<cite id="CITEREFAustinDeanGriswoldHart1966" class="citation journal cs1">Austin, W. M.; Dean, J. A.; Griswold, D. M.; Hart, O. P. (November 1966). "TV Applications of MOS Transistors". IEEE Transactions on Broadcast and Television Receivers. 12 (4): 68–76. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FTBTR1.1966.4320029">10.1109/TBTR1.1966.4320029</a>.</cite>

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<li id="cite_note-8"><a href="#cite_ref-8">^</a> <cite id="CITEREFUTE_I._VON_MEHLEM,_ROBERT_E._WALLIS1989" class="citation web cs1">UTE I. VON MEHLEM, ROBERT E. WALLIS (1989). <a rel="nofollow" class="external text" href="https://secwww.jhuapl.edu/techdigest/Content/techdigest/pdf/V10-N04/10-04-Mehlem.pdf">"SOLID-STATE POWER AMPLIFIERS FOR SATELLITE RADAR ALTIMETERS"</a> (PDF). Johns Hopkins University.</cite>

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<li id="cite_note-9"><a href="#cite_ref-9">^</a> <cite id="CITEREFW.Q._Lohmeyer,_K._Cahoy2013" class="citation journal cs1">W.Q. Lohmeyer, K. Cahoy (2013). <a rel="nofollow" class="external text" href="https://agupubs.onlinelibrary.wiley.com/doi/10.1002/swe.20071">"Space weather radiation effects on geostationary satellite solid-state power amplifiers"</a>. Space Weather. 11 (8): 476–488. <a href="Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/2013SpWea..11..476L">2013SpWea..11..476L</a>. <a href="Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1002%2Fswe.20071">10.1002/swe.20071</a>. <a href="Hdl_(identifier)" class="mw-redirect" title="Hdl (identifier)">hdl</a>:<a rel="nofollow" class="external text" href="https://hdl.handle.net/1721.1%2F110812">1721.1/110812</a>.</cite>

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<cite id="CITEREFAsif2018" class="citation book cs1">Asif, Saad (2018). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=yg1mDwAAQBAJ&pg=PT134">5G Mobile Communications: Concepts and Technologies</a>. <a href="CRC_Press" title="CRC Press">CRC Press</a>. p. 134. <a href="ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <bdi>9780429881343</bdi>.</cite>

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<li id="cite_note-11"><a href="#cite_ref-11">^</a> <cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://qrpblog.com/2019/10/a-600w-broadband-hf-amplifier-using-affordable-ldmos-devices/">"A 600W broadband HF/6m amplifier using affordable LDMOS devices"</a>. 27 October 2019.</cite>

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<cite id="CITEREFOzalas2015" class="citation audio-visual cs1">Ozalas, Matthew (14 January 2015). <a rel="nofollow" class="external text" href="https://www.youtube.com/watch?v=WAingaHfBMs">How to design an RF power amplifier – the basics</a> (short how-to video). Retrieved 10 February 2015 – via youtube.com.</cite>

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<div class="mw-heading mw-heading2"><h2 id="External_links">External links</h2></div>

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<div class="side-box-text plainlist">Wikimedia Commons has media related to <a href="https://commons.wikimedia.org/wiki/Category:RF_power_amplifiers" class="extiw external" title="commons:Category:RF power amplifiers">RF power amplifiers</a>.</div></div>

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<ul><li><cite id="CITEREFFuentes2008" class="citation report cs1">Fuentes, Carlos (October 2008). <a rel="nofollow" class="external text" href="https://web.archive.org/web/20130303211449/http://cas.web.cern.ch/cas/Denmark-2010/Caspers/AN-GT101A-Microwave%20Power%20Amplifier%20Fundamentals%2008-10-27%20%20CAS2010.pdf">Microwave Power Amplifier Fundamentals</a> (PDF) (Report). Bern, Switzerland: <a href="European_Centre_for_Nuclear_Research" class="mw-redirect" title="European Centre for Nuclear Research">European Centre for Nuclear Research</a>. Archived from <a rel="nofollow" class="external text" href="http://cas.web.cern.ch/cas/Denmark-2010/Caspers/AN-GT101A-Microwave%20Power%20Amplifier%20Fundamentals%2008-10-27%20%20CAS2010.pdf">the original</a> (PDF) on 3 March 2013. Retrieved 5 March 2013.</cite></li></ul>

<ul><li><cite id="CITEREFKhanifar2014" class="citation web cs1">Khanifar, Ahmad (1 December 2014). <a rel="nofollow" class="external text" href="http://www.linamptech.com/technical-support/rf-power-amplifier-design-for-digital-predistortion">"Wideband RF Power Amplifier Design Guidelines / RF Power Amplifier Design for Digital Predistortion"</a>. linamptech.com. Technical support. Laguna Hills, CA: Linamp Technologies, Inc. Retrieved 1 December 2014.</cite></li></ul></div><div><div class="zim-footer">

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